unisonic technologies co., ltd imt2a pnp epitaxial si licon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r215-003,c general purpose dual transistor ? description the utc imt2a is a general purpose dual transistor within two chips in a smt package. ? features * two chips in a smt package ? equivalent circuits ? ordering information order number package pin description packing lead free halogen free 1 2 3 4 5 6 imt2al-ag6-r IMT2AG-AG6-R so t-26 c2 b1 c1 e1 e2 b2 tape reel ? marking
imt2a pnp epitaxial si licon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r215-003,c ? absolute maximum rating (t a =25 c) parameter symbol ratings unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -50 emitter to base voltage v ebo -6 collector current i c -150 ma collector power dissipation (total) p c 300(note) mw junction temperature t j 150 c storage temperature t stg -55~ +150 note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. 200mw per element must not be exceeded. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector to base breakdown voltage bv cbo i c =-50 a -60 v collector to emitter breakdown voltage bv ceo i c =-1ma -50 emitter to base br eakdown voltage bv ebo i e =-50 a -6 collector cut off current i cbo v cb =-60 v -0.1 a emitter cut off current i ebo v eb =-6 v -0.1 collector to emitter saturation voltage v ce ( sat ) i c =-50 ma, i b =-5 ma -0.5 v dc forward current gain h fe v ce =-6 v, i c =-1ma 120 560 transition frequency f t v ce =-12v,i e =2ma, f=100mhz (note) 140 mhz output capacitance c ob v cb = -12v,i e =0ma,f=1mhz 4 5 pf note: transition frequency of the device.
imt2a pnp epitaxial si licon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r215-003,c ? typical characteristics -10 -8 -6 -4 -2 0 -0.4 0 -0.8 -1.2 -1.6 -2.0 collector to emitter voltage,v ce (v) collector current,i c (ma) grounded emitter output characteristics ( ) -50 0 -1 0 collector to emitter voltage,v ce (v) collector current,i c (ma) grounded emitter output characteristics ( ) -40 -30 -20 -10 -2 -3 -4 -5 v ce =-6v -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 base to emitter voltage,v be (v) collector current,i c (ma) grounded emitter propagation characteristics t a =25 500 200 100 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 collector current,i c (ma) dc current gain,h fe dc current gain vs. collector current t a =25 -1 -0.5 -0.2 -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 collector current,i c (ma) collector saturation voltage,v ce(sat) (v) collector-emitter saturation voltage vs. collector current t a =25 t a =25 i b =0a i b =-5a i b =-10a i b =-15a i b =-20a i b =-25a i b =-30a i b =0a i b =-50a i b =-100a i b =-150a i b =-200a i b =-250a i b =-300a i b =-350a t a =100 25 -40 t a =25 v ce =-5v -3v -1v i c / i b =50 i c / i b =20 i c / i b =10
imt2a pnp epitaxial si licon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r215-003,c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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